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Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute .
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 2 150 −55 to +150 °C °C V A A W
1 2 3
Unit V
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2
–0.1
14.0±0.5
0.8±0.1
2.54±0.3
Collector-emitter voltage 2SB1071 (Base open) 2SB1071A Emitter-base.
2SB1071A - SavantIC
·With TO-220Fa package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching a.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1071 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB1071 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1071 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1070 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SB1070A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 6 | 2SB1072 |
Hitachi Semiconductor |
PNP Transistor |
|
| 7 | 2SB1072 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SB1072L |
Hitachi Semiconductor |
PNP Transistor |
|
| 9 | 2SB1072S |
Hitachi Semiconductor |
PNP Transistor |
|
| 10 | 2SB1073 |
Panasonic Semiconductor |
PNP Transistor |
|
| 11 | 2SB1073 |
Kexin |
PNP Transistors |
|
| 12 | 2SB1073 |
GME |
PNP Transistor |
|