2SB1070A - Panasonic Semiconductor

2SB1070A Silicon PNP epitaxial planar type Transistor

Power Transistors www.DataSheet4U.com 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.

Features

• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 4.4±0.5
■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 1.3 150 −55 to +150 °C °C V A A W V Unit V Collector-emitter voltage 2SB1070 (Base open) 2SB1070A Emitter-base voltage (Collector open) Collector current Pea.