2SB1071 SILICON POWER TRANSISTOR Datasheet

2SB1071 SILICON POWER TRANSISTOR

·With TO-220Fa package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB1071 VCBO Collector-base voltage 2SB1071A 2SB1071 VCEO Collector -emitter voltage 2SB1071A VEBO IC ICM Emitter-base volta.

Features

; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V CONDITIONS 2SB1071 2SB1071A SYMBOL MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A 0.3 0.4 0.1 µs µs µs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semi.

The same part from a different manufacturer

2SB1071 - Panasonic Semiconductor

Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.7±0.1 Unit: mm 10.0±.

2SB1071 - INCHANGE

·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations f.

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2SB1071 - SavantIC