Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9± 0.2 4.9± 0.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power d.
0.45
–0.1 1.27
+0.2
˚C ˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE
* VCE(sat) fT Cob Conditions VCB =
–12V, IB = 0 IC =
–100µA, IB = 0 IE =
–1µA, IC = 0 VCE =
–10V, IC =
–5mA IC =
–50mA, IB =
–5mA VCB =
–10V, IE = 10mA, f = 200MHz VCB =
–10V, IE = 0, f = 1MHz 50 80 5 10
–200
–5 60 220
–1.5 V MHz pF min typ max
–2 Unit µA V V
*h
FE
Rank classification
Q 60 ~ 1.
2SA879 - Panasonic Semiconductor
Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9± 0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA872 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA872A |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 3 | 2SA876 |
Micro Electronics |
(2SAxxxx) TRANSISTOR |
|
| 4 | 2SA877 |
SavantIC |
(2SA877 / 2SA878) Silicon POwer Transistors |
|
| 5 | 2SA877 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SA878 |
SavantIC |
(2SA877 / 2SA878) Silicon POwer Transistors |
|
| 7 | 2SA878 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA807 |
SavantIC |
Silicon POwer Transistors |
|
| 9 | 2SA807 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA808 |
SavantIC |
Silicon POwer Transistors |
|
| 11 | 2SA808 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SA811A |
NEC |
PNP SILICON TRANSISTOR |
|