·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1619 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collec.
current DC current gain Transition frequency CONDITIONS IC=-50mA IB=0 IC=-3A; IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 20 10 MIN -80 2SA808 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V -1.5 -1.0 -1.0 V mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time VCC=-10V;IC=-3A; RL=3@ IB1=-0.3A; IB2=50mA 1.2 1.8 0.3 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA808 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA807 |
SavantIC |
Silicon POwer Transistors | |
2 | 2SA807 |
Inchange Semiconductor |
POWER TRANSISTOR | |
3 | 2SA811A |
NEC |
PNP SILICON TRANSISTOR | |
4 | 2SA812 |
NEC |
PNP Transistor | |
5 | 2SA812 |
WEITRON |
PNP Transistor | |
6 | 2SA812 |
Rectron |
SOT-23 BIPOLAR TRANSISTORS | |
7 | 2SA812 |
HOTTECH |
PNP Transistor | |
8 | 2SA812 |
Kexin |
PNP Transistors | |
9 | 2SA812 |
JCET |
PNP Transistor | |
10 | 2SA812 |
DC COMPONENTS |
PNP Transistor | |
11 | 2SA812 |
GME |
Silicon Epitaxial Planar Transistor | |
12 | 2SA812 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |