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2SA807 - SavantIC

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2SA807 Silicon POwer Transistors

·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collec.

Features

current DC current gain Transition frequency CONDITIONS IC=-50mA IB=0 IC=-3A; IB=-0.3A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 20 10 MIN -60 2SA807 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V -1.5 -1.0 -1.0 V mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time VCC=-10V;IC=-3A; RL=3? IB1=-0.3A; IB2=50mA 1.2 1.8 0.3 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA807 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .

The same part from a different manufacturer

Datasheet 2SA807 - Inchange Semiconductor 2SA807

·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Minimum Lo.

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