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·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2S.
own voltage Collector-emitter saturation voltage 2SA877 ICBO Collector cut-off current 2SA878 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V; f=1.0MHz IC=-1A ; VCE=-12V IE=-1mA ;IC=0 IC=-5A; IB=-0.5A VCB=-80V; IE=0 CONDITIONS 2SA877 2SA878 SYMBOL MIN -80 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -120 -6 -2.0 V V -0.1 mA -0.1 50 255 15 mA pF MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE.
2SA878 - Inchange Semiconductor
·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA872 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA872A |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 3 | 2SA876 |
Micro Electronics |
(2SAxxxx) TRANSISTOR |
|
| 4 | 2SA877 |
SavantIC |
(2SA877 / 2SA878) Silicon POwer Transistors |
|
| 5 | 2SA877 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SA879 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 7 | 2SA879 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor |
|
| 8 | 2SA807 |
SavantIC |
Silicon POwer Transistors |
|
| 9 | 2SA807 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA808 |
SavantIC |
Silicon POwer Transistors |
|
| 11 | 2SA808 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SA811A |
NEC |
PNP SILICON TRANSISTOR |
|