2SA512 - Toshiba Semiconductor

2SA512 Silicon PNP Transistor

: 2SA510 2SA512, SILICON PIMP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm pa39MAX | 0ft45MAX. f FEATURES • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I.

Features

• High Breakdown Voltage : VcEO=-100V : VcEO=-60V
• Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.)
• Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage 2SA510 2SA512 2SA510 2SA512 v CBO v CEO VEBO Collector Current ic Base Current IB Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C ?C T J Storage Temperature Range Tstg RATING UNIT -120 V -80 -100 V -60 -5 V -1.5 A -300 mA 800 mW 8 W 17.