·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.
kdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -2V hFE-2 DC Current Gain IC= -800mA; VCE= -2V hFE-1 Classifications R O Y 40-80 70-140 120-240 2SA505 MIN TYP. MAX UNIT -50 V -5 V -0.8 V -1.3 V -1.0 μA -1.0 μA 40 240 13 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif.
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA500 |
Toshiba |
Silicon PNP Epitaxial Transistor | |
2 | 2SA503 |
Toshiba |
Silicon PNP Transistor | |
3 | 2SA504 |
Toshiba |
Silicon PNP Transistor | |
4 | 2SA509 |
Toshiba |
Silicon PNP Transistor | |
5 | 2SA510 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
6 | 2SA512 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
7 | 2SA52 |
ETC |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR | |
8 | 2SA532 |
Micro Electronics |
Medium Power Amplifiers and Switches | |
9 | 2SA537 |
Hitachi |
Transistor | |
10 | 2SA537A |
Hitachi |
Transistor | |
11 | 2SA539 |
Usha India |
Transistors | |
12 | 2SA542 |
Usha |
Transistors |