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2SA512 |
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| Part Number | 2SA512 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | : 2SA510 2SA512, SILICON PIMP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm pa3... |
| Features |
• High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage 2SA510 2SA512 2SA510 2SA512 v CBO v CEO VEBO Collector Current ic Base Current IB Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C ?C T J Storage Temperature Range Tstg RATING UNIT -120 V -80 -100 V -60 -5 V -1.5 A -300 mA 800 mW 8 W 17... |
| Document |
 2SA512 Data Sheet
PDF 125.70KB |
| Distributor | Stock | Price | Buy |
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