2SA504 - Toshiba

2SA504 Silicon PNP Transistor

SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA) • Compl.

Features

• High Transition Frequency : f T=80MHz (Typ.)
• High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504)
• Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA)
• Complementary to 2SC503 and 2SC504. (Typ.) <1 X < srd CO <6 00.45 1 11 ^05.08 A 3 M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25°C Tc=25°C IB PC T i T s.