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2SA2210 - Inchange Semiconductor

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2SA2210 Silicon PNP Power Transistor

·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VE.

Features

Voltage IC= -7A; IB= -350mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -100uA; IC= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V MIN TYP. MAX UNIT -0.5 V -1.2 V -50 V -6 V -10 μA -10 μA 200 560 215 pF 140 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time withou.

The same part from a different manufacturer

Datasheet 2SA2210 - Sanyo Semicon Device 2SA2210

www.DataSheet4U.com Ordering number : ENA0667 2SA2210 SANYO Semiconductors DATA SHEET 2SA2210 Applications • PNP E.

Datasheet 2SA2210 - ON Semiconductor 2SA2210

Ordering number : ENA0667B 2SA2210 Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG http://onsemi.com Appl.

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