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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications 2SA2206 Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Colle.
er heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial producti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2201 |
Sanyo |
PNP Epitaxial Planar SIlicon Transistor |
|
| 2 | 2SA2202 |
ON Semiconductor |
Bipolar Transistor |
|
| 3 | 2SA2203 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 4 | 2SA2204 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA2205 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA2205 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | 2SA2207 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA2209 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 9 | 2SA2210 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 10 | 2SA2210 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2210 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 12 | 2SA2215 |
Toshiba |
Silicon PNP Transistor |
|