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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 2SA2215 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 .
2 ) Note 2: Mounted on FR4 board.(25.4mm × 25.4mm × 1.6mmt, Cu Pad: 645 mm2 ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2210 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA2210 |
ON Semiconductor |
Bipolar Transistor |
|
| 3 | 2SA2210 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SA2219 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SA2201 |
Sanyo |
PNP Epitaxial Planar SIlicon Transistor |
|
| 6 | 2SA2202 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | 2SA2203 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA2204 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 9 | 2SA2205 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 10 | 2SA2205 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2206 |
Toshiba |
Silicon PNP Transistor |
|
| 12 | 2SA2207 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|