2SA2210 |
Part Number | 2SA2210 |
Manufacturer | Inchange Semiconductor |
Description | ·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·relay drivers,lamp drivers,mo... |
Features |
Voltage
IC= -7A; IB= -350mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -100uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -10V
MIN TYP. MAX UNIT
-0.5
V
-1.2
V
-50
V
-6
V
-10
μA
-10
μA
200
560
215
pF
140
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time withou... |
Document |
2SA2210 Data Sheet
PDF 186.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA2210 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor | |
2 | 2SA2210 |
ON Semiconductor |
Bipolar Transistor | |
3 | 2SA2215 |
Toshiba |
Silicon PNP Transistor | |
4 | 2SA2219 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
5 | 2SA2201 |
Sanyo |
PNP Epitaxial Planar SIlicon Transistor |