2SA1942 - Inchange Semiconductor

2SA1942 Power Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC5199 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Features

age IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -6A; VCE= -5V COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V MIN TYP. MAX UNIT -160 V -2.5 V -1.5 V -5 μA -5 μA 55 160 35 320 pF 30 MHz  hFE-1 Classifications R O 55-110 80-160 NOTICE： ISC reserves the.