·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=2.
(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -4A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 260 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 30 MHz hFE-1 Classifications R O 55-110 80-160 NOTI.
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications 2SA1940 Unit: mm • Complement.
·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1941 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SA1941 |
JILIN SINO |
PNP Epitaxial Silicon Transistor | |
3 | 2SA1941 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1941 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1941 |
Inchange Semiconductor |
POWER TRANSISTOR | |
6 | 2SA1941B |
NELL SEMICONDUCTOR |
Silicon PNP Transistor | |
7 | 2SA1942 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
8 | 2SA1942 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SA1942 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SA1943 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
11 | 2SA1943 |
UTC |
PNP SILICON TRANSISTOR | |
12 | 2SA1943 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |