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2SA1940 - Inchange Semiconductor

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2SA1940 POWER TRANSISTOR

·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=2.

Features

(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -4A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 260 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 30 MHz  hFE-1 Classifications R O 55-110 80-160 NOTI.

The same part from a different manufacturer

Datasheet 2SA1940 - Toshiba Semiconductor 2SA1940

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications 2SA1940 Unit: mm • Complement.

Datasheet 2SA1940 - SavantIC 2SA1940

·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fi.

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