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2SA1942 |
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| Part Number | 2SA1942 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications 2SA1942 Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SC5199 • Recommended for 8... |
| Features |
re within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitan... |
| Document |
 2SA1942 Data Sheet
PDF 212.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1940 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1940 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1940 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1941 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SA1941 |
JILIN SINO |
PNP Epitaxial Silicon Transistor |
|