SEMICONDUCTOR 2SA1941B Series Silicon PNP triple diffusion planar transistor -10A/-140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage, V CEO = -140V (min) Complementary to 2SC5198B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.2 1.05 -0.1 5.45±0.1 C E.
High breakdown voltage, V CEO = -140V (min) Complementary to 2SC5198B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C APPLICATIONS Suitable for use in 70W high fidelity audio amplifier’s output stage 1 2 3 B E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current t p ≤ 5 ms.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1941 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SA1941 |
JILIN SINO |
PNP Epitaxial Silicon Transistor | |
3 | 2SA1941 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1941 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1941 |
Inchange Semiconductor |
POWER TRANSISTOR | |
6 | 2SA1940 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
7 | 2SA1940 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SA1940 |
Inchange Semiconductor |
POWER TRANSISTOR | |
9 | 2SA1942 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
10 | 2SA1942 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SA1942 |
Inchange Semiconductor |
Power Transistor | |
12 | 2SA1943 |
Toshiba Semiconductor |
Silicon PNP Transistor |