2SA1395 - Inchange Semiconductor

2SA1395 Silicon PNP Power Transistor

·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -1A ·High Switching Speed ·Complement to Type 2SC3567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.

Features

r-Emitter Sustaining Voltage IC= -1A; IB= -0.1A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -100V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V  hFE-2 Classifications M L K 40-80 60-120 100-200 2SA1395 MIN MAX UNIT -100 V -0.6 V -1.5 V -10 μA -10 μA 40 40 200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ti.