2SA1390 - Hitachi Semiconductor

2SA1390 Silicon PNP Epitaxial Transistor

2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO .

Features

transfer ratio DC current transfer ratio Base to emitter voltage V(BR)EBO I CBO VCE(sat) hFE1
* 1 hFE2 VBE Notes: 1. The 2SA1390 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See characteristic curves of 2SA673. 2 2SA1390 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 100 150 50 Ambient Temperature Ta (°C) 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither wa.