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Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, .
· Hgih breakdown voltage.
· Excellent hFE linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm 2003A
[2SA1319/2SC3332]
( ) : 2SA1319
(For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1390 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA1392 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SA1394 |
NEC |
PNP SILICON POWER TRANSISTOR |
|
| 4 | 2SA1395 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SA1395 |
NEC |
PNP SILICON POWER TRANSISTOR |
|
| 6 | 2SA1396 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SA1396 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1398 |
Isahaya Electronics |
Silicon PNP Epitaxial Type Transistor |
|
| 9 | 2SA1399 |
ETC |
SILICON PNP TRANSISTOR |
|
| 10 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 11 | 2SA1300 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 12 | 2SA1300 |
TRANSYS |
Plastic-Encapsulated Transistors |
|