2SA1355 POWER TRANSISTOR Datasheet

2SA1355 POWER TRANSISTOR

·TO-220 package ·High DC Current Gain ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RAT.

Features

a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 3.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1355 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CH.

The same part from a different manufacturer

2SA1355 - SavantIC

·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp dri.

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