2SA1350 - Hitachi Semiconductor

2SA1350 Silicon PNP Epitaxial Transistor

2SA1350 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1350 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage tempera.

Features

tage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE
* VBE VCE(sat) fT Cob NF 100 — — — — — V V MHz pF dB VCE =
  –12 V, IC =
  –2 mA I C =
  –10 mA, IB =
  –1 mA VCE =
  –12 V, IC =
  –2 mA VCB =
  –10 V, IE = 0, f = 1 MHz VCE =
  –6 V, IC =
  –0.1 mA Rg = 1 kΩ, f = 1 kHz 1. The 2SA1350 is grouped by hFE as follows. C 160 to 320 D 250 to 500 See characteristic curves of 2SA1031. 2 2SA1350 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 100 150 50 Ambient Temperatu.