2SA1352 PNP/NPN Epitaxial Planar Silicon Transistors Datasheet

2SA1352 PNP/NPN Epitaxial Planar Silicon Transistors

www.DataSheet4U.com Ordering number:ENN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications · Color TV chroma output, high-voltage driver applicatons. Package Dimensions unit:mm 2009B [2SA1352/2SC3416] 8.0 4.0 2.7 Features · High breakdown voltage : VCEO≤200V. · Small r.

Features

· High breakdown voltage : VCEO≤200V.
· Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 1.2 1 2 3 1 : Emitter 2 : Collector 3 : Base S.

The same part from a different manufacturer

2SA1352 - Inchange Semiconductor

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) ·Complement to Type 2SC3416 ·Minimum Lot-to-Lot variati.

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