Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications. Package Dimensions unit:mm 2009B [2SA1353/2SC3417] 8.0 4.0 2.7 Features · High breakdown voltage : VCE.
· High breakdown voltage : VCEO≤300V.
· Excellent high frequency characteristics : Cre=1.8pF(typ).
· Adoption of MBIT process.
3.0
1.5 7.0
1.6 0.8 0.8 0.6
3.0
11.0
15.5
0.5
( ) : 2SA1353
2.4 4.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.2
1
2
3
1 :Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (
–)300 (
–)300 (
–)5 (
–)1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1350 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
2 | 2SA1352 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SA1352 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | 2SA1355 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1355 |
Inchange Semiconductor |
POWER TRANSISTOR | |
6 | 2SA1356 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
7 | 2SA1357 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
8 | 2SA1357 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
9 | 2SA1357 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | 2SA1357 |
JCET |
PNP Transistor | |
11 | 2SA1358 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
12 | 2SA1358 |
Inchange Semiconductor |
Silicon PNP Power Transistor |