2SA1263N - Inchange Semiconductor

2SA1263N POWER TRANSISTOR

·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta.

Features

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -3A; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 290 pF fT Current-Gain—Bandwidth Product IC=-1A; VCE= -5V 30 MHz  hFE-1 Classifications R O 55-110 80-160 NOTICE： .