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·With ITO-220 package ·High switching speed ·Low collector saturation voltage ·Complement to type 2SC3157 APPLICATIONS ·For high voltage ,high speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Col.
ng voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A ;IB1=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; VBE=-1.5V Ta=125 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V 40 40 20 MIN -100 -0.6 -1.5 -0.01 -0.01 -1.0 -0.01 200 200 TYP. MAX UNIT V V V mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 Switching times ton ts tf Turn-on time Storage time Fall time .
2SA1261 - Inchange Semiconductor
·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@IC= -5A ·Fast Switching Speed ·Complement to Type 2SC3157 ·Mi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1261-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2SA1262 |
Sanken electric |
Silicon PNP Transistor |
|
| 3 | 2SA1262 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1262 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1263 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2SA1263 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SA1263N |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SA1263N |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 9 | 2SA1264 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | 2SA1264 |
Toshiba |
Silicon PNP Transistor |
|
| 11 | 2SA1264N |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1264N |
Inchange Semiconductor |
POWER TRANSISTOR |
|