2SA1261-Z - Inchange Semiconductor

2SA1261-Z Silicon PNP Power Transistor

·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

Features

EO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A; IB= -0.5A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped VCE(sat)
* Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(sat)
* Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -100V; RBE= 5.