·With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base v.
on frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60 2SA1262 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V -0.6 -100 -100 V µA µA 15 90 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10A;VCC=-20V 0.25 0.75 0.25 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1262 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@I.
2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Symbol .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1261 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SA1261 |
Inchange Semiconductor |
POWER TRANSISTOR | |
3 | 2SA1261-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | 2SA1263 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2SA1263 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
6 | 2SA1263N |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SA1263N |
Inchange Semiconductor |
POWER TRANSISTOR | |
8 | 2SA1264 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | 2SA1264 |
Toshiba |
Silicon PNP Transistor | |
10 | 2SA1264N |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SA1264N |
Inchange Semiconductor |
POWER TRANSISTOR | |
12 | 2SA1265 |
Inchange Semiconductor |
Silicon PNP Power Transistor |