2SA1225 - Inchange Semiconductor

2SA1225 Silicon PNP Transistor

·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector.

Features

wn Voltage IC=-1mA ,IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter Voltage VCE=-5V, IC=-0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -0.1A; VCE= -5V fT Transition frequency VCE=-10V ,IC=-100mA Cob Collector output capacitance NOTE:Pulse test VCB=-10V ,IE=0,f=1MHz MIN -5 -160 -160 70 TYP 100 30 MAX UNI T V V V -1.5 V -1.0 V -0.1 μA -0.1 μA 240 MHz pF  hFE Classifications O Y 70-140 120-240 isc website：www.iscsemi.com 2 isc & iscse.