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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies.
• Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* PT Tj Tstg Ratings −160 −140/
–160 −5.0 −500 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1220 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1220 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SA1220A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1220A |
INCHANGE |
PNP Transistor |
|
| 5 | 2SA1221 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2SA1225 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SA1225 |
JCST |
PNP Transistor |
|
| 8 | 2SA1225 |
Inchange Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SA1226 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 10 | 2SA1227 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SA1227 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 12 | 2SA1227A |
SavantIC |
SILICON POWER TRANSISTOR |
|