2SA1220 - INCHANGE

2SA1220 PNP Transistor

·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA.

Features

TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.7 V -1.3 V -1.0 μA IEBO Emitter Cutoff Current hFE-1 DC Current Gain VEB= -3V; IC=0 IC= -5mA ; VCE= -5V -1.0 μA 35 hFE-2 DC Current Gain IC= -0.3A ; VCE= -5V 60 320 fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 175 MHz 26 p.