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2SA1213 - Toshiba Semiconductor

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2SA1213 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873 .

Features

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-07 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut.

The same part from a different manufacturer

Datasheet 2SA1213 - JCET 2SA1213

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) F.

Datasheet 2SA1213 - Kexin 2SA1213

SMD Type Transistors Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC .

Datasheet 2SA1213 - Diodes 2SA1213

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Datasheet 2SA1213 - WILLAS 2SA1213

SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) FEATURES z Small Flat Package z Power Amplifier and Sw.

Datasheet 2SA1213 - GME 2SA1213

Silicon Planar Epitaxial Transistor FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Smal.

Datasheet 2SA1213 - BLUE ROCKET ELECTRONICS 2SA1213

SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ,,, 2SC2873 。 Low collector saturatio.

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