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2SA1213 |
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| Part Number | 2SA1213 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC ... |
| Features |
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1980-07 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut... |
| Document |
 2SA1213 Data Sheet
PDF 189.50KB |
| Distributor | Stock | Price | Buy |
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