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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Power Dissipation ·Complement to Type 2SC2921 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V V.
age IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V hFE Classifications O P Y 50-100 70-140 90-180 2SA1215 MIN TYP. MAX UNIT -160 V -2.0 V -100 μA -100 μA 50 180 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not des.
2SA1215 - Sanken electric
LAPT 2SA1215 Application : Audio and General Purpose (Ta=25°C) 2SA1215 –100max –100max –160min 50min∗ –2.0max 50typ 400.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1210 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1213 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1213 |
GME |
Silicon Planar Epitaxial Transistor |
|
| 4 | 2SA1213 |
Kexin |
Transistors |
|
| 5 | 2SA1213 |
JCET |
PNP Transistor |
|
| 6 | 2SA1213 |
Diodes |
PNP Transistor |
|
| 7 | 2SA1213 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 8 | 2SA1213 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SA1213-G |
Comchip |
General Purpose Transistor |
|
| 10 | 2SA1213-O |
MCC |
PNP Transistors |
|
| 11 | 2SA1213-Y |
MCC |
PNP Transistor |
|
| 12 | 2SA1213Y |
Diodes |
PNP Transistor |
|