Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAM.
er on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IC=-0.5A ; VCE=-2V f=1MHz ; VCB=-10V;IE=0 80 25 MIN -40 2SA1217 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.8 -1.0 -0.1 -0.1 240 V V µA µA 100 35 MHz pF hFE-1 Classifications O 80-160 Y 120-240 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power.
2SA1217 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2877 ·Minimum L.
2SA1217 - Toshiba
:1 SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES . Suitable fo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1210 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1213 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1213 |
GME |
Silicon Planar Epitaxial Transistor |
|
| 4 | 2SA1213 |
Kexin |
Transistors |
|
| 5 | 2SA1213 |
JCET |
PNP Transistor |
|
| 6 | 2SA1213 |
Diodes |
PNP Transistor |
|
| 7 | 2SA1213 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 8 | 2SA1213 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SA1213-G |
Comchip |
General Purpose Transistor |
|
| 10 | 2SA1213-O |
MCC |
PNP Transistors |
|
| 11 | 2SA1213-Y |
MCC |
PNP Transistor |
|
| 12 | 2SA1213Y |
Diodes |
PNP Transistor |
|