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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Volta.
Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -8A; VCE= -4V 2SA1170 MIN TYP. MAX UNIT -200 V -6 V -2.5 V -100 μA -100 μA 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment wh.
2SA1170 - SavantIC
·With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applica.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1171 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA1173 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SA1175 |
NEC |
PNP SILICON TRANSISTOR |
|
| 4 | 2SA1177 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA1179 |
Rectron |
BIPOLAR TRANSISTORS |
|
| 6 | 2SA1179 |
LGE |
PNP Transistor |
|
| 7 | 2SA1179 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 8 | 2SA1179 |
SeCoS |
PNP Silicon Plastic Encapsulated Transistor |
|
| 9 | 2SA1179 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SA1179 |
ETC |
Transistor |
|
| 11 | 2SA1179 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|
| 12 | 2SA1179N |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|