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Ordering number : EN7198B 2SA1179N/2SC2812N Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA http://onsemi.com Features • Miniature package facilitates miniaturization in end products • High breakdown voltage Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter V.
• Miniature package facilitates miniaturization in end products
• High breakdown voltage
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC ICP IB PC Tj
Tstg
Conditions
Ratings (--)55 (--)50 (--)5
(--)150 (--)300
(--)30 200 150
--55 to +150
Unit V V V mA mA mA
mW °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings .
2SA1179N - Sanyo Semicon Device
Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Tran.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1179 |
Rectron |
BIPOLAR TRANSISTORS |
|
| 2 | 2SA1179 |
LGE |
PNP Transistor |
|
| 3 | 2SA1179 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 4 | 2SA1179 |
SeCoS |
PNP Silicon Plastic Encapsulated Transistor |
|
| 5 | 2SA1179 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1179 |
ETC |
Transistor |
|
| 7 | 2SA1179 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|
| 8 | 2SA1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1170 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1171 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 11 | 2SA1173 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 12 | 2SA1175 |
NEC |
PNP SILICON TRANSISTOR |
|