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Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use · Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Package Dimensions unit:mm 2033A 4.0 [2SA1177] 3.0 2.2 Features · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0.
· High fT (230MHz typ.) and small Cre (1.1 pF typ.).
· Small NF (2.5dB typ.).
0.4 0.5
0.6
1.8 15.0
0.4
0.4
1 2 1.3
0.7
3 1.3
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
3.0 3.8
1 : Emitter 2 : Collector 3 : Base SANYO : SPA
Ratings
–30
–20
–5
–30 150 125
–55 to +125 Unit V V V mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1170 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1171 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SA1173 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SA1175 |
NEC |
PNP SILICON TRANSISTOR |
|
| 6 | 2SA1179 |
Rectron |
BIPOLAR TRANSISTORS |
|
| 7 | 2SA1179 |
LGE |
PNP Transistor |
|
| 8 | 2SA1179 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 9 | 2SA1179 |
SeCoS |
PNP Silicon Plastic Encapsulated Transistor |
|
| 10 | 2SA1179 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1179 |
ETC |
Transistor |
|
| 12 | 2SA1179 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|