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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC C.
off Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 fT DC Current Gain Current-Gain—Bandwidth Product IC= -10mA ; VCE= -10V IC= -10mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -10V,ftest= 1MHz MIN TYP. MAX UNIT -0.6 V -1 V -0.1 μ A -1 μ A 90 400 80 MHz 2.5 pF isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1170 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1171 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SA1175 |
NEC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SA1177 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1179 |
Rectron |
BIPOLAR TRANSISTORS |
|
| 7 | 2SA1179 |
LGE |
PNP Transistor |
|
| 8 | 2SA1179 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 9 | 2SA1179 |
SeCoS |
PNP Silicon Plastic Encapsulated Transistor |
|
| 10 | 2SA1179 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1179 |
ETC |
Transistor |
|
| 12 | 2SA1179 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|