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·With TO-3 package ·Complement to type 2SC2607 APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage.
A ;IB=0 IC=-10A; IB=-1A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V -200 V Collector-emitter saturation voltage -3.0 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 Transition frequency 20 MHz Switching times resistive load tr ts tf Rise time IC=-5.0A IB1=-IB2=-0.5A RL=12@;VCC=-60V 0.3 µs Storage time 0.9 µs Fall time 0.2 µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1116 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) .
2SA1116 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 ·Minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1110 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SA1110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1110 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1111 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR |
|
| 5 | 2SA1111 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 6 | 2SA1112 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR |
|
| 7 | 2SA1112 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1115 |
ETC |
PNP Transistor |
|
| 9 | 2SA1117 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1117 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |
|