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·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Em.
Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-8A ; VCE=-4V 20 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1117 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SA1117 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 ·Minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1110 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SA1110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1110 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1111 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR |
|
| 5 | 2SA1111 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 6 | 2SA1112 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR |
|
| 7 | 2SA1112 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1115 |
ETC |
PNP Transistor |
|
| 9 | 2SA1116 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1116 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |
|