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2SA1116 |
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| Part Number | 2SA1116 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -5A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V
2SA1116
MIN TYP. MAX UNIT
-200
V
-3.0 V
-100 μA
-100 μA
30
20
MHz
0.3
μs
0.9
μs
0.2
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only ... |
| Document |
 2SA1116 Data Sheet
PDF 203.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1110 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SA1110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1110 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1111 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR |
|
| 5 | 2SA1111 |
Inchange Semiconductor |
POWER TRANSISTOR |
|