·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.
O Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA hFE-1 DC Current Gain IC= -150mA; VCE= -10V hFE-2 DC Current Gain IC= -500mA; VCE= -5V fT Current-Gain—Bandwidth Product IE= 50mA; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz MIN TYP. MAX UNIT -180 V -5 V -2.0 V -2.0 V 65 330 50 200 MHz 30 pF hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 NOTICE: ISC reserves the rights to make changes of the con.
·With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequenc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1110 |
Panasonic Semiconductor |
PNP Transistor | |
2 | 2SA1110 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SA1110 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA1111 |
SavantIC |
(2SA1111 / 2SA1112) SILICON POWER TRANSISTOR | |
5 | 2SA1111 |
Inchange Semiconductor |
POWER TRANSISTOR | |
6 | 2SA1115 |
ETC |
PNP Transistor | |
7 | 2SA1116 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SA1116 |
INCHANGE |
PNP Transistor | |
9 | 2SA1117 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SA1117 |
Inchange Semiconductor |
POWER TRANSISTOR | |
11 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |