·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70.
ge IC= -2mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -10V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -5V 80 220 fT Current-Gain—Bandwidth Product IE= 0.5A; VCB= -5V; f= 200MHz 150 MHz COB Output Capacitance IE= 0; VCB= -20V; f= 1.0MHz.
·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PI.
Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1090 |
Toshiba |
Silicon PNP transistor | |
2 | 2SA1091 |
Toshiba Semiconductor |
TRANSISTOR | |
3 | 2SA1091 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1091 |
LZG |
SILICON PNP TRANSISTOR | |
5 | 2SA1093 |
Toshiba |
Silicon PNP Transistor | |
6 | 2SA1093 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SA1093 |
Inchange Semiconductor |
POWER TRANSISTOR | |
8 | 2SA1094 |
Toshiba |
Silicon PNP Transistor | |
9 | 2SA1094 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SA1094 |
Inchange Semiconductor |
Power Transistor | |
11 | 2SA1095 |
Toshiba |
Silicon PNP Transistor | |
12 | 2SA1095 |
SavantIC |
SILICON POWER TRANSISTOR |