2SA1095 Silicon PNP Transistor Datasheet

2SA1095 Silicon PNP Transistor

: I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequency : f T=60MHz (Typ.) • Complementary to 2SC2565. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collect.

Features

• High Breakdown Voltage : Vceo=-160V
• High Transition Frequency : f T=60MHz (Typ.)
• Complementary to 2SC2565.
• Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO v EBO ic T stg RATING -160 -160 -5 -15 15 150 150 -55M.50 UNIT V 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA.

The same part from a different manufacturer

2SA1095 - SavantIC

·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power .

2SA1095 - Inchange Semiconductor

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2565 ·Minimum L.

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2SA1095 - Toshiba