2SA1096 |
Part Number | 2SA1096 |
Manufacturer | Inchange Semiconductor |
Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
ge IC= -2mA; IB= 0
-50
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-70
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A
-1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB= -0.15A
-1.5
V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
-1
μA
ICEO
Collector Cutoff Current
VCE= -10V; IB= 0
-100 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10 μA
hFE
DC Current Gain
IC= -1A ; VCE= -5V
80
220
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCB= -5V; f= 200MHz
150
MHz
COB
Output Capacitance
IE= 0; VCB= -20V; f= 1.0MHz... |
Document |
2SA1096 Data Sheet
PDF 215.03KB |
Distributor | Stock | Price | Buy |
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