2SA1096 Inchange Semiconductor POWER TRANSISTOR Datasheet, en stock, prix

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2SA1096

Inchange Semiconductor
2SA1096
2SA1096 2SA1096
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Part Number 2SA1096
Manufacturer Inchange Semiconductor
Description ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ...
Features ge IC= -2mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -10V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -5V 80 220 fT Current-Gain—Bandwidth Product IE= 0.5A; VCB= -5V; f= 200MHz 150 MHz COB Output Capacitance IE= 0; VCB= -20V; f= 1.0MHz...

Document Datasheet 2SA1096 Data Sheet
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