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·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter volt.
tage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1A ; IB=0 IE=-0.01A ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V 55 30 MIN -140 -5 2SA1094 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V V -2.0 -2.0 -50 -50 240 V V µA µA 220 70 pF MHz hFE-1 classifications R 55-110 O 80-160 Y 120-240 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Sili.
2SA1094 - Toshiba
: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage :.
2SA1094 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2564 ·Minimum L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1090 |
Toshiba |
Silicon PNP transistor |
|
| 2 | 2SA1091 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SA1091 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1091 |
LZG |
SILICON PNP TRANSISTOR |
|
| 5 | 2SA1093 |
Toshiba |
Silicon PNP Transistor |
|
| 6 | 2SA1093 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SA1093 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1095 |
Toshiba |
Silicon PNP Transistor |
|
| 9 | 2SA1095 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1095 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1096 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SA1096 |
SavantIC |
SILICON POWER TRANSISTOR |
|