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2SA1095 |
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| Part Number | 2SA1095 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequency : f T=60MHz (Typ.) • Complementary to 2SC2565... |
| Features |
• High Breakdown Voltage : Vceo=-160V • High Transition Frequency : f T=60MHz (Typ.) • Complementary to 2SC2565. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO v EBO ic T stg RATING -160 -160 -5 -15 15 150 150 -55M.50 UNIT V 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA... |
| Document |
 2SA1095 Data Sheet
PDF 95.83KB |
| Distributor | Stock | Price | Buy |
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